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2SK3472
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V)
2SK3472
Switching Regulator Applications
* * * * Low drain-source ON-resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 1 2 20 122 1 2 150 -55 to150 Unit V V V A A W mJ A mJ C C
Pulse (Note 1)
Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-64 2-7B1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 203 mH, RG = 25 , IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3472
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge tf toff Qg Qgs Qgd VDD 360 V, VGS = 10 V, ID = 1 A - Duty < 1%, tw = 10 s = VDD 200 V - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 10 ID = 0.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min 30 450 2.0 0.3 Typ. 4.0 0.8 180 2 20 7 15 30 70 5 3 2 Max 10 100 4.0 4.6 ns nC pF Unit A V A V V S
RL = 400
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 350 1.3 Max 1 2 -1.7 Unit A A V s C
Marking
K3472
Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish.
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2SK3472
ID - VDS
1.0 Common source 10 Tc = 25C pulse test 8.0 0.6 2.0 5.75 6.0 5.5 1.6 10 8.0
ID - VDS
6.25 6.0 Common source Tc = 25C pulse test
0.8
Drain current ID (A)
Drain current ID (A)
5.25
1.2
5.75
0.4
5.0 4.75
0.8
5.5 5.25
0.2
VGS = 4.5 V
0.4
5.0 VGS = 4.5 V
0
0
2
4
6
8
10
0
0
10
20
30
40
50
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
2.0 Common source VDS = 20 V pulse test 20
VDS - VGS
Common source Tc = 25C pulse test
1.6
VDS (V) Drain-source voltage
100
16
Drain current ID (A)
1.2
12
0.8
8
0.4
25 Tc = -55C
4 0.25 0
ID = 1 A 0.5
0
0
2
4
6
8
10
0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
10 Common source 5V DS = 20 V 3 pulse test Tc = -55C 25 100
RDS (ON) - ID
50 Common source
(S)
Forward transfer admittance Yfs
() RDS (ON)
1 0.5 0.3
Drain-source ON-resistance
30 Tc = 25C pulse test
10
5 3
VGS = 10, 15 V
0.1 0.05 0.02 0.1
0.3
0.5
1
3
5
10
1 0.1
0.3
0.5
1
3
5
10
Drain current ID (A)
Drain current ID (A)
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2SK3472
RDS (ON) - Tc
()
16 Common source VGS = 10 V pulse test 10 Common source
IDR - VDS
Drain-source ON-resistance RDS (ON)
(A)
12
3
pulse test
Drain reverse current IDR
8 0.5 2
ID = 1 A
1
0.3
0.25
0.1
10 3
1
0.03 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2
0 -80
-40
0
40
80
160
0.01
0
-0.2
-0.4
Case temperature
Tc (C)
Drain-source voltage
VDS (V)
Capacitance - VDS
500 300 5 Ciss
Vth - Tc
Common source VDS = 10 V ID = 1 mA pulse test
Vth (V) Gate threshold voltage
4
(pF)
100 50 30 Coss 10 5 3 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10
Capacitance C
3
2
1
Crss 30 50 100 0 -80 -40 0 40 80 120 160
1 0.1
Drain-source voltage
VDS (V)
Case temperature Tc (C)
PD - Tc
40 500
Dynamic input/output characteristics
Common source ID = 1 A Tc = 25C pulse test VDS 90 300 VDS = 360 V 12 180 20
Drain power dissipation PD (W)
VDS (V)
400
16
30
20
Drain-source voltage
200 VGS 100
8
10
4
0 0
40
80
120
160
200
0 0
20
40
60
80
0 100
Case temperature
Tc (C)
Total gate charge Qg (nC)
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Gate-source voltage
VGS (V)
2SK3472
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-a)
3
1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 100 1m 10 m 100 m Single pulse PDM t T Duty = t/T Rth (ch-c) = 6.25C/W 1 10
Pulse width
tw
(S)
Safe operating area
30 150
EAS - Tch
Avalanche energy EAS (mJ)
10
120
3
Drain current ID (A)
ID max (pulsed) * ID max (continuous) 1 ms *
90
100 s *
1
60
0.3
DC operation Tc = 25C
30
0.1 *: Single nonrepetitive pulse Tc = 25C 00.3 Curves must be derated linearly with increase in temperature. 00.1 1 0.1 0 25 50 75 100 125 150
Channel temperature (initial) Tch (C)
VDSS max 10 100
Drain-source voltage
VDS (V)
15 V -15 V
BVDSS IAR VDD VDS Waveform
Test circuit
RG = 25 VDD = 90 V, L = 203 mH
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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